Nanostructured Gate Dielectric Boosts Stability of OFETs

The Group of STAMI-COPE Professor Bernard Kippelen may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors (OFETs) by using a nanostructured gate dielectric. The structure, composed of a fluoropolymer layer and a nanolaminate made from two metal oxide materials serves as a gate dielectric and simultaneously protects the organic semiconductor. The nanostructured gate dielectric enables OFETS to operate with unprecedented stability. Click here for more information.